| PART |
Description |
Maker |
| GT30J322 |
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| GT60J323 GT60J323H |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Current Resonance Inverter Switching Application
|
TOSHIBA[Toshiba Semiconductor]
|
| GT50J327 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
|
TOSHIBA[Toshiba Semiconductor]
|
| GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
|
TOSHIBA
|
| GT60M32306 GT60M323 |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
| GT60N322 |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
| GT40T301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications
|
TOSHIBA
|
| GT40Q321 |
Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching Application
|
TOSHIBA[Toshiba Semiconductor]
|
| MR2920 MR2000 MR2940 |
Standby Compatible Partial Resonance Power Supply IC Module with High-speed IGBT
(MR2900 Series) Standby Compatible Partial Resonance Power Supply IC Module
|
Shindengen Electric Mfg.Co.Ltd
Password
|
| SKIIP03NAC066V1 |
Large Current 300mA CMOS LDO Regulators; Output voltage (V): 2.8; Output current (mA): 300; Supply voltage (V): 2.5 to 5.5; I/O voltage difference (mV): 60; Ripple rejection (dB): 60; Circuit current (µA): 65; Package: HVSOF6
3-phase bridge rectifier 3-phase bridge inverter
|
Semikron International
|
| MR4040 |
Partial Resonance Power Supply ICModule
|
Shindengen Electric Mfg...
|
| SQ6601PT |
Off-Line Quasi-Resonance Flyback Switching Regulator
|
AUK
|
